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BTA204S-500E

NXP
Part Number BTA204S-500E
Manufacturer NXP
Description Three quadrant triacs guaranteed commutation
Published Apr 17, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guarantee...
Datasheet PDF File BTA204S-500E PDF File

BTA204S-500E
BTA204S-500E

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads.
These devices balance the requirements of commutation performance and gate sensitivity.
The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.
BTA204S series D, E and F BTA204M series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER MAX.
MAX.
600D 600E 600F 600 4 25 MAX.
UNIT 800E 800F 800 4 25 BTA204S (or BTA204M)- 500D BTA204S (or BTA204M)- 500E BTA204S (or BTA204M)- 500F Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current VDRM IT(RMS) ITSM V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 6 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 4 -800 800 UNIT V A It dIT/dt IGM VGM PGM PG(AV) Tstg Tj 2 I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature 2 - 25 27 3.
1 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltag...


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