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BTA212B-800C

NXP
Part Number BTA212B-800C
Manufacturer NXP
Description Three quadrant triacs
Published Apr 17, 2005
Detailed Description Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass pass...
Datasheet PDF File BTA212B-800C PDF File

BTA212B-800C
BTA212B-800C

Overview
Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA212B series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX.
MAX.
MAX.
UNIT 600C 600 12 95 800C 800 12 95 V A A BTA212B- 500C Repetitive peak off-state 500 voltages RMS on-state current 12 Non-repetitive peak on-state 95 current PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 20 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 95 105 45 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.
000 Philips Semiconductors Preliminary specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA212B series C MIN.
- TYP.
60 MAX.
1.
5 2.
0 - UNIT K/W ...


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