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BTA216X-600C

NXP
Part Number BTA216X-600C
Manufacturer NXP
Description Three quadrant triacs
Published Apr 17, 2005
Detailed Description Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass pass...
Datasheet PDF File BTA216X-600C PDF File

BTA216X-600C
BTA216X-600C

Overview
Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA216X series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX.
MAX.
MAX.
UNIT 600C 600 16 140 800C 800 16 140 V A A BTA216X- 500C Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 20 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.
000 Philips Semiconductors Preliminary specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or h...


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