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BTA225B-500C

NXP
Part Number BTA225B-500C
Manufacturer NXP
Description Three quadrant triacs high commutation
Published Apr 17, 2005
Detailed Description Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass pass...
Datasheet PDF File BTA225B-500C PDF File

BTA225B-500C
BTA225B-500C

Overview
Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA225B series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
MAX.
UNIT 500C 500 25 180 600C 600 25 180 800C 800 25 180 V A A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 30 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 25 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 190 209 180 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.
000 Philips Semiconductors Preliminary specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA225B series C MIN.
- TYP.
55 MAX.
1.
0 1.
4 - UNIT ...


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