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BTH151S-650R

NXP
Part Number BTH151S-650R
Manufacturer NXP
Description Thyristor High Repetitive Surge
Published Apr 17, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BTH151S-650R Thyristor High Repetitive Surge Product specification March 2001 1;3 ...
Datasheet PDF File BTH151S-650R PDF File

BTH151S-650R
BTH151S-650R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BTH151S-650R Thyristor High Repetitive Surge Product specification March 2001 1;3 Semiconductors Thyristor High Repetitive Surge Product specification BTH151S-650R GENERAL DESCRIPTION Passivated thyristor in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.
This thyristor has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis.
QUICK REFERENCE DATA SYMBOL PARAMETER MAX.
UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM ITRM Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current 650 7.
5 12 110 60 V A A A A PINNING - SOT428 PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode PIN CONFIGURATION tab 2 13 SYMBOL a k g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
VDRM, VRRM Repetitive peak off-state voltages half sine wave; - IT(AV) IT(RMS) ITSM ITRM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Average on-state current Tmb ≤ 103 ˚C RMS on-state current all conduction angles Non-repetitive peak on-state current half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.
3 ms Repetitive peak on-state t = 10ms, τ = 3s, Tmb ≤ 45˚C, no.
current of surges = 100k I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/μs Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature - - - -40 - MAX.
1650 7.
5 12 110 121 60 61 50 2 5 5 5 0.
5 150 125 UNIT V A A A A A A2s A/μs A V V W W ˚C ˚C 1 Although not recommended, off-state volt...


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