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BTS244Z

Infineon Technologies AG
Part Number BTS244Z
Manufacturer Infineon Technologies AG
Description Speed TEMPFET
Published Apr 17, 2005
Detailed Description BTS 244 Z Speed TEMPFET  N-Channel  Enhancement mode  Logic Level Input  Analog driving possible  Fast switching u...
Datasheet PDF File BTS244Z PDF File

BTS244Z
BTS244Z

Overview
BTS 244 Z Speed TEMPFET  N-Channel  Enhancement mode  Logic Level Input  Analog driving possible  Fast switching up to 1 MHz  Potential-free temperature sensor with 1 5 VPT05166 thyristor characteristics  Overtemperature protection  Avalanche rated Type BTS 244 Z VDS 55 V RDS(on) 13 m Package P-TO220-5-3 P-TO220-5-62 TO-220-5-43 Ordering Code Q67060-S6000-A2 Q67060-S6003-A2 Q67060-S6008 D Pin 3 and TAB G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin 1 2 3 4 5 Symbol G A D K S Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source 1 2000-05-17 BTS 244 Z Maximum Ratings Parameter Drain source voltage Drain-gate voltage , RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 10 V, VDS VGS = 4.
5 V, VDS 0.
5 V, TC = 85 °C Symbol VDS V Value 55 55 Unit V DGR VGS ID(ISO) 20 A 19 26 0.
5 V, TC = 85 °C Continuous drain current 1) TC = 100 °C, VGS = 4.
5V Pulsed drain current Avalanche energy, single pulse ID = 19 A, RGS = 25  Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 ID ID puls EAS Ptot Tj Tjpeak Tstg 35 188 1.
65 170 -40 .
.
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+175 200 -55 .
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+150 E 40/150/56 J W °C 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C 2 2000-05-17 BTS 244 Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min.
footprint Thermal resistance @ 6 cm2 cooling area 1) Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.
25 mA Gate threshold voltage, VGS = VDS ID = 130 µA ID = 250 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 °C VGS = 20 V, VDS = 0 V, Tj =...


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