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BTS933

Siemens Semiconductor Group
Part Number BTS933
Manufacturer Siemens Semiconductor Group
Description Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
Published Apr 17, 2005
Detailed Description HITFET® BTS 933 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • O...
Datasheet PDF File BTS933 PDF File

BTS933
BTS933

Overview
HITFET® BTS 933 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 3 7 V mΩ A A 2000 mJ limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology.
Fully protected by embedded protected functions.
V bb + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 14.
07.
1998 BTS 933 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.
2V ≤ VIN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) IIN no limit | IIN | ≤ 2 - 40 .
.
.
+150 - 55 .
.
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+150 90 2000 3000 mA VIN < -0.
2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 7 A Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.
7 and EOS/ESD assn.
standard S5.
1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD 90 74 E 40/150/56 VIN=low or high; VA=13.
5 V td = 400 ms, RI = 2 Ω , ID=0,5*7A td = 400 ms, RI = 2 Ω , ID= 7A DIN humidity category...


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