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BU2520DF

NXP
Part Number BU2520DF
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2520DF PDF File

BU2520DF
BU2520DF

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emmiter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
6 0.
35 MAX.
...


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