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BU2522DF

NXP
Part Number BU2522DF
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2522DF PDF File

BU2522DF
BU2522DF

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
6 0.
12 MAX.
1500 800 10 25 45 5.
0 2.
2 0.
25 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 6.
0 A; IB = 1.
2 A f = 64 kHz IF = 6.
0 A ICsat = 6.
0 A; f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-65 MAX.
1500 800 10 25 6 9 150 6 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP.
35 MAX.
2.
8 UNIT K/W K/W 1 Turn-off current.
September 1997 1 Rev 1.
200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF ISOLATION LIMITING ...


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