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BU2720AF


Part Number BU2720AF
Manufacturer NXP
Title Silicon Diffused Power Transistor
Description High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour tel...
Features tem (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak va...

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BU2720AX : High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.5 7.4 MAX. 1700 825 10 25 45 1.0 8.5 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.38 A f = 16 kHz ICsat = 5.5 A; f = 16 kHz PINNING - SOT399 P.

BU2720AX : ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 1700 825 10 25 10 14 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Trans.




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