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BU2727A

NXP
Part Number BU2727A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High ...
Datasheet PDF File BU2727A PDF File

BU2727A
BU2727A

Overview
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
5.
0 2.
2 MAX.
1700 825 12 30 125 1.
0 tbf UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 5.
0 A; IB = 0.
91 A ICM = 5.
0 A; IB(end) = 0.
9 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-65 MAX.
1700 825 12 30 12 25 200 25 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN.
MAX.
10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.
5 kΩ) 1 Turn-off current.
September 1997 1 Rev 1.
100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
45 MAX.
1.
0 UNIT K/W K/W STATIC CHAR...


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