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BU4525AL

NXP
Part Number BU4525AL
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525AL GENERAL DESCRIPTION Enhanc...
Datasheet PDF File BU4525AL PDF File

BU4525AL
BU4525AL

Overview
Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
8.
0 7.
5 t.
b.
f t.
b.
f MAX.
1500 800 12 30 125 3.
0 t.
b.
f t.
b.
f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 9.
0 A; IB = 2.
25A f= 16 kHz f= 70 kHz ICsat = 9.
0 A; f = 16 kHz ICsat = 7.
5 A; f = 70 kHz PINNING -...


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