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BU4530AW

NXP
Part Number BU4530AW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced ...
Datasheet PDF File BU4530AW PDF File

BU4530AW
BU4530AW


Overview
Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP.
10 8 t.
b.
f t.
b.
f MAX.
1500 800 16 40 125 3.
0 t.
b.
f t.
b.
f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 10.
0 A; IB = 2.
5 A f = 32 kHz f = 90 kHz ICsat = 10.
0 A; f = 32 kHz ICsat = 8 A; f = 90 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 800 16 40 10 15 10 125 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 25 ˚C 1 Turn-off current.
January 1998 1 Rev 1.
000 Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
45 MAX.
1.
0 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES IC...


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