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BUH1015HI

ST Microelectronics
Part Number BUH1015HI
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ® BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPES H...
Datasheet PDF File BUH1015HI PDF File

BUH1015HI
BUH1015HI

Overview
® BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS 3 3 2 1 DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
2 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CBO V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max.
Operating Junction T emperature o Valu e 1500 700 10 14 18 8 11 160 -65 to 150 150 70 Un it V V V A A A A W o o C C 1/8 December 1999 BUH1015/BUH1015HI THERMAL DATA TO -218 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 0.
78 1.
8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 o C Min.
Typ .
Max.
0.
2 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ hFE∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime I E = 10 mA I C = 10 A I C = 10 A I C = 10 A I C = 10 A IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V 10 1.
5 1.
5 7 5 10 14 V V V T j = 100 C o ts tf ts tf V CC = 400 V I B1 = 2 ...


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