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BUJ403AX

NXP
Part Number BUJ403AX
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-vol...
Datasheet PDF File BUJ403AX PDF File

BUJ403AX
BUJ403AX

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP.
0.
15 15.
5 170 MAX.
1200 1200 550 6 10 32 1.
0 300 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 2 A; IB = 0.
4 A IC = 3 A; VCE = 5 V IC = 2.
5 A; IB1 = 0.
5 A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated...


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