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S1A2272A01

Samsung semiconductor
Part Number S1A2272A01
Manufacturer Samsung semiconductor
Description FM NOISE CANCELLER
Published Apr 17, 2005
Detailed Description FM NOISE CANCELLER S1A2272A01 INTRODUCTION The S1A2272A01 is a monolithic integrated circuit for the FM noise cancelle...
Datasheet PDF File S1A2272A01 PDF File

S1A2272A01
S1A2272A01


Overview
FM NOISE CANCELLER S1A2272A01 INTRODUCTION The S1A2272A01 is a monolithic integrated circuit for the FM noise canceller used in car stereos.
It is used in combination with a PLL FM multiplex demodulator with a pilot signal canceller.
16−SOP−225A FEATURES • • • • • • Operation voltage range: VCC = 8V − 15V Low quiescent circuit current Low distortion: THD = 0.
02% at VI = 300mV Pilot signal compensation Built-in monostable multivibrator.
Variable input type noise AGC system.
ORDERING INFORMATION Device S1A2272A01-S0B0 Package 16-SOP-225A Operating Temperature −20°C − +75°C BLOCK DIAGRAM SUB IN(-) PLT CAN SIGNAL PW ADJ NOISE AGC ADJ NOISE DET ADJ BYPASS HPO HPI 16 15 14 13 12 11 10 9 INVERSION AMP MULTI VIBRATOR HP AMP NOISE DETECTOR GATE SUB AMP LP AMP BUFFER 1 Vcc 2 OUTPUT 3 SUB IN 4 LPO 5 LPI 6 BC 7 INPUT 8 GND 1 S1A2272A01 FM NOISE CANCELLER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC PD TOPR TSTG Value 16 300 −20 − + 75 −40 − + 125 Unit V Min °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = 12V, 300 mV, f = 1kHz, unless otherwise specified) Test Conditions Input Pin Quiescent Circuit Current Voltage Gain Output Voltage Total Harmonic Distortion Input Resistance Low pass AMP Gain High pass AMP Gain Inverted Amp Distortion Inverted Amp Dynamic Range Inverted Amp Gain Output Noise Voltage Gate Time Noise Sensitivity ICCQ GV VO THD RI GV (LP) AVH THD VO GV VNO tG SN − V7 = 300 mV, f = 1kHz V7 = variable, f = 1kHz V7 = 300mV, f = 1kHz V7 = 300mV, f = 1kHz V5 = 300mV, f = 1kHz V9 = 100mV f = 200kHz f = 19kHZ V15 = 100mV f = 19kHz V15 = 100mV f = 19kHz Bypass V7 V15 to GND VO = 100mVp-p, 1µs, f = 1kHz V7, 1µs, f = 1kHz Output Pin − Output Output THD = 1% Output − V4 V10 Output Output THD = 1% Output Output, 100 kHz LPF Output Output 36 0 1.
58 300 − 0 − 13 − − -0.
2 1.
3 16 0.
8 − 0.
01 51 0.
83 2.
92 − − 2.
28 30 21 − 25 1.
8 − 0.
03 67 1.
58 4.
35 0.
...



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