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S1P2655A02

Samsung semiconductor
Part Number S1P2655A02
Manufacturer Samsung semiconductor
Description LINEAR INTEGRATED CIRCUIT
Published Apr 17, 2005
Detailed Description LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP The ...
Datasheet PDF File S1P2655A02 PDF File

S1P2655A02
S1P2655A02

Overview
LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collector outputs.
Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.
Peak inrush currents to 600mA permit them to drive incandescent lamps.
The S1P2655A01 is a general purpose array for use with DTL, 16−SOP TTL, PMOS or CMOS logic directly.
The S1P2655A02 version does away with the need for any external discrete resistors, since each usit has a resistor and a zener diode in series with the input.
The S1P2655A02 is designed for use with 14 to 25V PMOS devices.
The zener diode also gives these devices excellent noise immunity.
The S1P2655A03 has a series base resistor to each darlington pair, and thus allows operation di...


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