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ULBM2TE

Part Number	ULBM2TE
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 17, 2005
Detailed Description	ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° ...
Datasheet	ULBM2TE PDF File

Overview

ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: • • • Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F 0.
40 A 36 V 16 V 4.
0 V 5 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 35 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .
200 / 5.
080 .
029 / 0.
740 .
028 / 0.
720 .
355 / 9.
020 .
315 / 8.
010 .
165 / 4.
200 .
500 / 12.
700 .
016 / 0.
410 .
045 / 1.
140 .
034 / 0.
860 .
370 / 9.
370 .
335 / 8.
500 .
180 / 4.
570 .
750 / 19.
050 .
020 / 0.
508 ORDER CODE: ASI10679 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 16 36 4.
0 1.
0 UNITS V V V mA --pF dB IE = 1.
0 mA VCB = 15 V VCE = 5.
0 V VCB = 12.
5 V VCE = 12.
5 V POUT = 2.
0 W IC = 50 mA f = 1.
0 MHz f = 470 MHz 20 200 10 8.
0 55 % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...

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