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UMG3N

Rohm
Part Number UMG3N
Manufacturer Rohm
Description Dual Digital Transistor
Published Apr 17, 2005
Detailed Description EMG3 / UMG3N / FMG3A Transistors Emitter common (dual digital transistors) EMG3 / UMG3N / FMG3A zFeatures 1) Two DTC143...
Datasheet PDF File UMG3N PDF File

UMG3N
UMG3N

Overview
EMG3 / UMG3N / FMG3A Transistors Emitter common (dual digital transistors) EMG3 / UMG3N / FMG3A zFeatures 1) Two DTC143T chips in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
zExternal dimensions (Unit : mm) EMG3 0.
5 0.
5 1.
0 1.
6 0.
22 (4) (3) (2) (5) zStructure Dual NPN digital transistor (each with a single built in resistors) ROHM : EMT5 0.
13 1.
2 1.
6 (1) Each lead has same dimensions Abbreviated symbol : G3 (4) (3) The following characteristics apply to both the DTr1 and DTr2.
UMG3N 0.
65 0.
65 1.
3 0.
2 2.
0 (2) (5) zEquivalent circuit 0.
15 1.
25 2.
1 (1) 0.
5 0to0.
1 EMG3 / UMG3N (3) R1 DTr2 (4) (2) (1) R1=4.
7kΩ R1 DTr1 (5) FMG3A (3) R1 DTr2 (2) (4) (5) R1=4.
7kΩ R1 DTr1 (1) 0.
1Min.
Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : G3 FMG3A 0.
95 0.
95 1.
9 0.
8 0to0.
1 0.
3 (2) (3) 0.
7 (1) zAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector EMG3, UMG3N power dissipation FMG3A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 −55 to +150 ˚C ˚C Unit 0.
15 1.
6 2.
8 V V V mA mW (5) (4) 0.
3to0.
6 Each lead has same dimensions ∗1 ∗2 ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : G3 ∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
1.
1 2.
9 0.
9 Rev.
A 1/2 EMG3 / UMG3N / FMG3A Transistors zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol Min.
Typ.
Max.
Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.
25mA VCE=5V, IC=1mA 50 50 5 − − − 100 − − − − − − − 250 250 − − − 0.
5 0.
5...


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