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UNI-IMPS

Clare
Part Number UNI-IMPS
Manufacturer Clare
Description HIGH-SPEED TRANSIENT SURGE PROTECTORS
Published Apr 17, 2005
Detailed Description HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors (0....
Datasheet PDF File UNI-IMPS PDF File

UNI-IMPS
UNI-IMPS

Overview
HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors (0.
55-20kV) provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP.
These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times combined with peak current ratings in excess of 20kA.
A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient.
In addition, the low capacitance of these devices allows for direct placement on highfrequency lines and antenna feeds without excessive loading.
FEATURES s Fast impulse breakdown (≤120% of typical DC APPLICATIONS s s s s s breakdown to 200kV/µs) s Tight DC breakdown voltage tolerance (± 10%) s Non-radioactive s Low capacitance Antenna feedlines Test equipment Video displays Medical electronics Instrumentation circuits STANDARD VOLTAGES Series UBD DC Breakdown Voltage (typ) 550 600 650 750 850 1.
0 1.
2 1.
5 2.
0 2.
5 3.
0 4.
0 4.
0 5.
0 6.
0 7.
5 10.
0 12.
0 15.
0 20.
0 V V V V V kV kV kV kV kV kV kV kV kV kV kV kV kV kV kV Unit UBT and UGT (See detailed specifications for more information.
) www.
cpclare.
com 561 HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS SPECIFICATIONS All characteristics at 25˚C UBD-550 CONDITIONS 100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs) UBD-600 MIN 540 1010 420 UBD-650 MIN 585 1010 500 PARAMETER Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance SYMBOL MIN TYP V BD Vbd IR C 495 1010 330 550 - MAX 605 660 20.
0 - TYP 600 - MAX 660 720 20.
0 - TYP 650 - MAX UNITS 715 780 20.
0 V V Ω pF surges Life Ratings Surge Life UBD-750 PARAMETER Device Specifications DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs) V BD Vbd IR C 675 1010 660 750 825 900 20.
0 - UBD-850 MIN 765 1010 830 UBD-1.
0 MIN 900 1010 1080 CONDITIONS SYMBOL MIN TYP MAX TYP 850...


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