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UPA1434

NEC
Part Number UPA1434
Manufacturer NEC
Description NPN SILICON POWER TRANSISTOR ARRAY
Published Apr 17, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE...
Datasheet PDF File UPA1434 PDF File

UPA1434
UPA1434

Overview
DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION The µPA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
26.
8 MAX.
4.
0 PACKAGE DIMENSION (in millimeters) FEATURES • Easy mount by 0.
1 inch of terminal interval.
• High hFE.
Low VCE(sat).
hFE = 800 to 3200 (at IC = 0.
5 A) VCE(sat) = 0.
5 V MAX.
10 (at IC = 2 A) ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 2.
54 1.
4 0.
6 ±0.
1 1.
4 0.
5 ±0.
1 µPA1434H 1 2 3 4 5 6 7 8 910 Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2 CONNECTION DIAGRAM 3 4 5 6 7 8 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 ˚C) Total Power Dissipation (Tc = 25 ˚C) Junction Temperature Storage Temperature ** 4 Circuits Tj Tstg 150 –55 to +150 ˚C ˚C PT2** 28 W VCBO VEBO IC(DC) IC(pulse)* IB(DC) PT1** 60 60 7 3 6 0.
6 3.
5 V V V A/unit A/unit A/unit W Collector to Emitter Voltage VCEO 1 10 MIN.
10 2.
5 PIN NO.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) * PW ≤ 300 µs, Duty Cycle ≤ 10 % The information in this document is subject to change without notice.
Document No.
IC-3480 Date Published September 1994 P Printed in Japan © 1994 µPA1434 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 MIN.
TYP.
MAX.
10 10 UNIT TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.
5 A VCE = 5 V, IC = 3 A IC = 2 A, IB = 2...


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