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UPA804TC

NEC
Part Number UPA804TC
Manufacturer NEC
Description NPN Transistor
Published Apr 17, 2005
Detailed Description DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5004) FLAT-...
Datasheet PDF File UPA804TC PDF File

UPA804TC
UPA804TC


Overview
DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5004) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF.
FEATURES • High fT: fT = 5.
0 GHz TYP.
(@ VCE = 5 V, IC = 5 mA, f = 1 GHz) • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5004) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Supplying Form Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
µPA804TC µPA804TC-T1 Taping products (3 kp/reel) Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPA804TC.
Unit sample quantity is 50 pcs.
) ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PTNote Ratings 20 12 3 60 150 in 1 element 200 in 2 elements 125 –55 to +125 Unit V V V mA mW Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note Mounted on 1.
08 cm2 × 1.
0 mm glass epoxy substrate.
Caution Electro-static sensitive devices The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P14549EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan © 1999 µPA804TC ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product (1) Feedback Capacitance Insertion Power Gain (1) Symbol ICBO IEBO hFE fT Cre |S21e|2 Conditions VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 ...


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