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UPA835TC

NEC
Part Number UPA835TC
Manufacturer NEC
Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
Published Apr 17, 2005
Detailed Description DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A ...
Datasheet PDF File UPA835TC PDF File

UPA835TC
UPA835TC

Overview
DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
FEATURES • Low noise Q1 : NF = 1.
5 dB TYP.
@ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.
2 dB TYP.
@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 8.
5 dB TYP.
@ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.
0 dB TYP.
@ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN T...


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