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UPA843TC

NEC
Part Number UPA843TC
Manufacturer NEC
Description NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Published Apr 17, 2005
Detailed Description PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TC NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) ...
Datasheet PDF File UPA843TC PDF File

UPA843TC
UPA843TC

Overview
PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TC NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600) • Low voltage operation Q1: Built-in high gain transistor fT = 13.
5 GHz, S21e2 = 10.
0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 5.
0 GHz, S21e2 = 4.
0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz BUILT-IN TRANSISTORS Q1 3-pin thin-type ultra super minimold part No.
2SC5603 Q2 2SC5600 ORDERING INFORMATION Part Number Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face the perforation side of the tape µPA843TC µPA843TC-T1 Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P14679EJ2V0DS00 (2nd edition) Date Published April 2000 NS CP(K) Printed in Japan The mark • shows major revised points.
© 1999, 2000 µPA843TC ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Q1 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Ptot Note Ratings Q2 9 5.
5 1.
5 100 Unit 15 6 2 35 V V V mA mW °C °C 200 in 1 element 230 in 2 elements 150 −65 to +150 Tj Tstg 2 Note Mounted on 1.
08 cm × 1.
0 mm (t) glass epoxy substrate ELECTRICAL CHARACTERISTICS (TA = +25 °C) (...


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