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UPC805T

NEC
Part Number UPC805T
Manufacturer NEC
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
Published Apr 17, 2005
Detailed Description PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WIT...
Datasheet PDF File UPC805T PDF File

UPC805T
UPC805T

Overview
PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.
3 pF TYP.
• Built-in 2 Transistors (2 × 2SC4958) PACKAGE DRAWINGS (Unit: mm) 2.
1±0.
1 1.
25±0.
1 0.
65 0.
65 2.
0±0.
2 1.
3 2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
3 0.
9±0.
1 µPA805T 0.
7 4 5 µPA805T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative.
(Unit sample quantity is 50 pcs.
) PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 9 6 2 10 60 in 1 element 120 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW 6 Q1 5 0~0.
1 4 Q2 1 2 3 PIN CONNECTIONS 1.
Collector (Q1) 4.
Emitter (Q2) 2.
Emitter (Q1) 5.
Base (Q2) 3.
Collector (Q2) 6.
Base (Q1) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology.
Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No.
ID-3639 (O.
D.
No.
ID-9146) Date Published April 1995 P Printed in Japan © 0.
15 –0 +0.
1 0.
2 –0 1 6 +0.
1 X Y 1995 µPA805T ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure hFE Ratio SYMBOL ICBO IEBO hFE fT Cre |S21|2 NF hFE1/hFE2 CONDITION VCB = 5 V, I E = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 m...


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