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UPC8120T

NEC
Part Number UPC8120T
Manufacturer NEC
Description VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
Published Apr 17, 2005
Detailed Description DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8119T, µPC8120T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER...
Datasheet PDF File UPC8120T PDF File

UPC8120T
UPC8120T

Overview
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8119T, µPC8120T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier.
Due to 100 MHz to 1.
9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone.
Two types of gain control let users choose in accordance with system design.
3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer components.
The µPC8119T and µPC8120T are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes.
These materials can protect chip surface from external pollution and prevent corrosion / migration.
Thus, this IC has excellent performance, uniformity and reliability.
FEATURES • Recommended operating frequency : f = 100 MHz to 1.
92 ...


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