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VTB6061J

PerkinElmer Optoelectronics
Part Number VTB6061J
Manufacturer PerkinElmer Optoelectronics
Description VTB Process Photodiodes
Published Apr 17, 2005
Detailed Description VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Large area planar silicon photodiod...
Datasheet PDF File VTB6061J PDF File

VTB6061J
VTB6061J

Overview
VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package.
Chip is isolated from case.
The third lead allows case to be grounded.
These diodes have very high shunt resistance and have good blue response.
CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .
058 in2 (37.
7 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB6061J SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.
- 50% Resp.
Pt.
Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS M...


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