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VTE3322LA

Part Number	VTE3322LA
Manufacturer	PerkinElmer Optoelectronics
Description	GaAs Infrared Emitting Diodes
Published	Apr 17, 2005
Detailed Description	GaAs Infrared Emitting Diodes Long T-1 Plastic Package — 940 nm VTE3322LA, 24LA PACKAGE DIMENSIONS inch (mm) DESCRIPT...
Datasheet	VTE3322LA PDF File

Overview

GaAs Infrared Emitting Diodes Long T-1 Plastic Package — 940 nm VTE3322LA, 24LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A LONG T-1 CHIP SIZE: .
011" X .
011" This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): Maximum Reverse Voltage: -40°C to 100°C 100 mW 1.
43 mW/°C 50 mA 0.
71 mA/°C 3A -.
8%/°C 5.
0V Maximum Reverse Current @ VR = 5V...

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VTE3322LA GaAs Infrared Emitting Diodes - PerkinElmer Optoelectronics

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