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VTP1188S

PerkinElmer Optoelectronics
Part Number VTP1188S
Manufacturer PerkinElmer Optoelectronics
Description VTP Process Photodiodes
Published Apr 17, 2005
Detailed Description VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch (mm) CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 ...
Datasheet PDF File VTP1188S PDF File

VTP1188S
VTP1188S

Overview
VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch (mm) CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .
017 in2 (1.
1 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate.
A clear molded lens is used to increase sensitivity.
Low junction capacitance permits fast response time.
Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP11188S SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coeff...


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