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VTP8551

PerkinElmer Optoelectronics
Part Number VTP8551
Manufacturer PerkinElmer Optoelectronics
Description VTP Process Photodiodes
Published Apr 17, 2005
Detailed Description VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch (mm) CASE 22 MINI-DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ...
Datasheet PDF File VTP8551 PDF File

VTP8551
VTP8551

Overview
VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch (mm) CASE 22 MINI-DIP CHIP ACTIVE AREA: .
012 in2 (7.
45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package.
Suitable for direct mounting to P.
C.
B.
Arrays can be formed by positioning these devices side by side.
These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 85°C -40°C to 85°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP8551 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coef...


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