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VTT3324LA

Part Number	VTT3324LA
Manufacturer	PerkinElmer Optoelectronics
Description	.025 NPN Phototransistors
Published	Apr 17, 2005
Detailed Description	.025" NPN Phototransistors Clear Long T-1 (3 mm) Plastic Package VTT3323LA, 4LA, 5LA PACKAGE DIMENSIONS inch (mm) CAS...
Datasheet	VTT3324LA PDF File

Overview

.
025" NPN Phototransistors Clear Long T-1 (3 mm) Plastic Package VTT3323LA, 4LA, 5LA PACKAGE DIMENSIONS inch (mm) CASE 50A LONG T-1 (3 mm) CHIP TYPE: 25T PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 3 mm diameter, lensed, end looking, transparent plastic package.
These devices are spectrally and mechanically matched to the VTE337xLA series of IREDs.
ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.
6 mm from case, 5 sec.
max.
) -40°C to 100°C -40°C to 100°C 50 mW 0.
71 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min.
VTT3323LA VTT3324LA VTT3325LA 2.
0 4.
0 6.
0 Max.
— — — H fc (mW/cm2) VCE = 5.
0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max.
100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min.
30 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min.
5.
0 5.
0 5.
0 Saturation Voltage VCE(SAT) lC = 1.
0 mA H = 400 fc Volts, Max.
0.
25 0.
25 0.
25 Rise/Fall Time tR/tF lC = 1.
0 mA RL = 100 Ω µsec, Typ.
3.
0 4.
0 5.
0 Angular Response θ1/2 Part Number Typ.
±10° ±10° ±10° Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave.
, St.
Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.
perkinelmer.
com/opto 95 ...

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VTT3324LA .025 NPN Phototransistors - PerkinElmer Optoelectronics

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