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VTT9003

PerkinElmer Optoelectronics
Part Number VTT9003
Manufacturer PerkinElmer Optoelectronics
Description .040 NPN Phototransistors
Published Apr 17, 2005
Detailed Description .040" NPN Phototransistors Clear Epoxy TO-106 Ceramic Package VTT9002, 9003 PACKAGE DIMENSIONS inch (mm) CASE 8 TO-10...
Datasheet PDF File VTT9003 PDF File

VTT9003
VTT9003

Overview
.
040" NPN Phototransistors Clear Epoxy TO-106 Ceramic Package VTT9002, 9003 PACKAGE DIMENSIONS inch (mm) CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a layer of clear epoxy.
The base connection is brought out allowing conventional transistor biasing.
These devices are spectrally matched to any of PerkinElmer IREDs.
ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.
6 mm from case, 5 sec.
max.
) -20°C to 70°C -20°C to 70°C 100 mW 2.
5 mW/°C 25 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min.
VTT9002 VTT9003 2.
0 5.
0 Max.
— — H fc (mW/cm2) VCE = 5.
0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max.
100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min.
30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min.
6.
0 6.
0 Saturation Voltage VCE(SAT) lC = 1.
0 mA H = 400 fc Volts, Max.
0.
55 0.
55 Rise/Fall Time tR/tF lC = 1.
0 mA RL = 100 Ω µsec, Typ.
4.
0 6.
0 Typ.
±50° ±50° Angular Response θ1/2 Part Number Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave.
, St.
Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.
perkinelmer.
com/opto 100 ...


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