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WS27C256L-20DMB

STMicroelectronics
Part Number WS27C256L-20DMB
Manufacturer STMicroelectronics
Description Military 32K x 8 CMOS EPROM
Published Apr 17, 2005
Detailed Description WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — 120 ns Access Time • Ceramic Leadless Ch...
Datasheet PDF File WS27C256L-20DMB PDF File

WS27C256L-20DMB
WS27C256L-20DMB


Overview
WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — 120 ns Access Time • Ceramic Leadless Chip Carrier (CLLCC) • EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts • Fast Programming • DESC SMD No.
5962-86063 • 300 Mil DIP or Standard 600 Mil DIP • JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word.
It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs.
The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems.
Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state...



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