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ZVN4310A

Zetex Semiconductors
Part Number ZVN4310A
Manufacturer Zetex Semiconductors
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Published Apr 17, 2005
Detailed Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model a...
Datasheet PDF File ZVN4310A PDF File

ZVN4310A
ZVN4310A

Overview
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.
5Ω * Spice model available ZVN4310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Practical Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Practical Power Dissipation at T amb=25°C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.
9 1 12 ± 20 850 1.
13 -55 to +150 UNIT V A A A V mW W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN.
BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 9 0.
36 0.
48 600 0.
5 0.
65 100 1 3 20 10 100 TYP.
MAX.
UNIT CONDITIONS.
V V nA µA µA A Ω Ω mS I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) V DS=25 V, V GS=10V V GS=10V,I D=3A V GS=5V, I D=1.
5A V DS=25V,I D=3A g fs 3-393 ZVN4310A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN.
C iss C oss TYP.
MAX.
350 140 UNIT pF pF V DS=25 V, V GS=0V, f=1MHz CONDITIONS.
C rss t d(on) tr t d(off) tf 30 8 25 30 16 pF ns ns ns ns V DD ≈ 25V, V GEN=10V, I D=3A R GS=50 Ω (1) Measured under pulsed conditions.
Width=300µs.
Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse ge...


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