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ZVNL110G

Zetex Semiconductors
Part Number ZVNL110G
Manufacturer Zetex Semiconductors
Description N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
Published Apr 17, 2005
Detailed Description SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES * LOW RDS(ON) - 3Ω 7 ...
Datasheet PDF File ZVNL110G PDF File

ZVNL110G
ZVNL110G

Overview
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES * LOW RDS(ON) - 3Ω 7 ZVNL110G D PARTMARKING DETAIL - ZVNL110 D G S ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 600 6 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN.
BV DSS 100 0.
75 1.
5 100 10 100 750 4.
5 3.
0 225 75 25 8 7 12 15 13 MAX.
UNIT CONDITIONS.
V V nA µA µA mA Ω Ω mS pF pF pF ns ns ns ns V DD≈ 25V, I D=1A, V GS =10V V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=100V, V GS=0V V DS=80V, V GS=0V, T=125°C (2) V DS=25V, V GS=5V V GS=5V, I D=250mA V GS=10V, I D=500mA V DS=25V, I D=500mA Gate-Source Threshold Voltage...


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