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ZXM64P03

Zetex Semiconductors
Part Number ZXM64P03
Manufacturer Zetex Semiconductors
Description 35V P-CHANNEL MOSFET
Published Apr 17, 2005
Detailed Description ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION Thi...
Datasheet PDF File ZXM64P03 PDF File

ZXM64P03
ZXM64P03

Overview
ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.
075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package APPLICATIONS · 100W Class D Audio Output Stage · Motor Control ORDERING INFORMATION DEVICE ZXM64P035L3 MULTIPLES 1000 DEVICE MARKING · ZXM6 4P035 Front View PROVISIONAL ISSUE A - JANUARY 2002 1 ZXM64P035L3 ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; T C =25°C)(a) (V GS = -10V; T A =25°C)(b) Pulsed Drain Current (b) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(b) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j :T stg LIMIT -35 Ϯ 20 -12 -3.
3 -19 -2.
3 -19 20 160 1.
5 12 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Case (a) Junction to Ambient (b) SYMBOL R θ JC R θ JA VALUE 6.
25 83.
3 UNIT °C/W °C/W PROVISIONAL ISSUE A - JANUARY 2002 2 ZXM64P035L3 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS -35 I DSS I GSS V GS(th) -1.
0 0.
075 0.
105 2.
3 -1 Ϯ 100 V ␮A nA V ⍀ ⍀ S I D =-250 µ A, V GS =0V V DS =-35V, V GS =0V V GS = Ϯ 20V, V DS =0V I =-250 ␮ A, V DS = V GS D V GS =-10V, I D =-2.
4A V GS =-4.
5V, I D =-1.
2A V DS =-10V,I D =-1.
2A SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DY...


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