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ZXMD63C02X

Zetex Semiconductors
Part Number ZXMD63C02X
Manufacturer Zetex Semiconductors
Description 20V DUAL N-/P-Channel MOSFET
Published Apr 17, 2005
Detailed Description ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-C...
Datasheet PDF File ZXMD63C02X PDF File

ZXMD63C02X
ZXMD63C02X

Overview
ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.
13⍀; ID=2.
4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.
27⍀; ID=-1.
7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
MSOP8 FEATURES • • • • • • • • • Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMD63C02XTA ZXMD63C02XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units Top View DEVICE MARKING • ZXM63C02 PROVISIONAL ISSUE A - JUNE 1999 1 ZXMD63C02X ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=4.
5V; T A=25°C)(b)(d) (V GS=4.
5V; T A=70°C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A=25°C (a)(d) Linear Derating Factor Power Dissipation at T A=25°C (a)(e) Linear Derating Factor Power Dissipation at T A=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j:T stg 2.
4 1.
9 19 -1.
5 19 0.
87 6.
9 1.
04 8.
3 1.
25 10 -55 to +150 N-CHANNEL 20 ± 12 -1.
7 -1.
35 -9.
6 -1.
4 -9.
6 P-CHANNEL -20 UNIT V V A A A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R θJA R θJA R θJA VALUE 143 100 120 UNIT °C/W °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Rep...


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