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ZXMN2A01

Zetex Semiconductors
Part Number ZXMN2A01
Manufacturer Zetex Semiconductors
Description 20V N-CHANNEL MOSFET
Published Apr 17, 2005
Detailed Description ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.12⍀ D=2.09A DESCRIPTION This new gene...
Datasheet PDF File ZXMN2A01 PDF File

ZXMN2A01
ZXMN2A01

Overview
ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.
12⍀ D=2.
09A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS SOT23 • DC - DC Converters • Power Management Functions • Motor control ORDERING INFORMATION DEVICE ZXMN2A01FTA ZXMN2A01FTC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units DEVICE MARKING • 7N2 Top View PROVISIONAL ISSUE B - JUNE 2001 1 ZXMN2A01F ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =4.
5V; T A =25°C(b) V GS =4.
5V; T A =70°C(b) V GS =4.
5V; T A =25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 20 12 2.
09 1.
67 1.
84 10 1.
05 10 625 5 806 6.
4 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A mW mW/°C mW mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - JUNE 2001 2 ZXMN2A01F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Sour...


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