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ZXT13N20DE6

Part Number	ZXT13N20DE6
Manufacturer	Zetex Semiconductors
Description	20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Published	Apr 17, 2005
Detailed Description	ZXT13N20DE6 SuperSOT4™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 38m ; IC= 4.5A DESCR...
Datasheet	ZXT13N20DE6 PDF File

Overview

ZXT13N20DE6 SuperSOT4™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 38m ; IC= 4.
5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.
This makes it ideal for high efficiency, low voltage switching applications.
FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=4.
5A Continuous Collector Current SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control ORDERING INFORMATION DEVICE ZXT13N20DE6TA ZXT13N20DE6TC DEVICE MARKING N20D REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units C C B Top View C C E 10000 units ISSUE 1 - DECEMBER 1999 1 ZXT13N20DE6 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 50 20 7.
5 15 4.
5 500 1.
1 8.
8 1.
7 13.
6 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 73 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 1 - DECEMBER 1999 2 ZXT13N20DE6 TYPICAL CHARACTERISTICS 1.
2 Max Power Dissipation (W) 10 IC Collector Current (A) 1.
0 0.
8 0.
6 0.
4 0.
2 0.
0 1 DC 1s 100ms 10ms 1ms 100µs Single Pulse Tamb=25°C 100m 10m 100m 1 10 0 20 40 60 80 100 120 140 160 VCE Collector-Emitter Voltage (V) ...

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ZXT13N20DE6 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR - Zetex Semiconductors

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