DatasheetsPDF.com

TC74VHC11F

Toshiba
Part Number TC74VHC11F
Manufacturer Toshiba
Description Triple 3-Input AND Gate
Published Apr 23, 2005
Detailed Description TC74VHC11F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F, TC74VHC11FT Triple 3-Input AND Gat...
Datasheet PDF File TC74VHC11F PDF File

TC74VHC11F
TC74VHC11F

Overview
TC74VHC11F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC11F, TC74VHC11FT Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output.
An input protection circuit ensures that 0 to 5.
5 V can be applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
Features • High speed: tpd = 4.
1 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74ALS11 TC74VHC11F TC74VHC11FT Weight SOP14-P-300-1.
27A TSSOP14-P-0044-0.
65A : 0.
18 g (typ.
) : 0.
06 g (typ.
) Start of commercial production 1991-05 1 2014-03-01 Pin Assignment TC74VHC11F/FT IEC Logic Symbol 1A 1 1B 2 2A 3 2B 4 2C 5 2Y 6 GND 7 (top view) 14 VCC 13 1C 12 1Y 11 3C 10 3B 9 3A 8 3Y 1A (1) & 1B (2) 1C (13) 2A (3) 2B (4) 2C (5) 3A (9) 3B (10) 3C (11) (12) 1Y (6) 2Y (8) 3Y Truth Table A B C Y L X X L X L X L X X L L H H H H X: Don’t care Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −20 mA ±20 mA ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)