DatasheetsPDF.com

TCDT1120G

Vishay Telefunken
Part Number TCDT1120G
Manufacturer Vishay Telefunken
Description Optocoupler
Published Apr 23, 2005
Detailed Description TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output NC C E 6 5 4 1 A (+) 17201_6 2 C (–...
Datasheet PDF File TCDT1120G PDF File

TCDT1120G
TCDT1120G


Overview
TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output NC C E 6 5 4 1 A (+) 17201_6 2 C (–) 3 NC DVE 17201_4 DESCRIPTION The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual in line package.
ORDER INFORMATION (1) PART TCDT1120 TCDT1122 TCDT1123 TCDT1124 TCDT1120G TCDT1122G TCDT1123G TCDT1124G Note (1) G = leadform 10.
16 mm; G is not marked on the body.
FEATURES • High common mode rejection • Four CTR groups available • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against electrical shock (safety class II) • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl.
class I - IV at mains voltage ≤ 300 V - for appl.
class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 AGENCY APPROVALS • UL1577, file no.
E52744, double protection • BSI IEC 60950 IEC 60065 • DIN EN 60747-5-5 (VDE 0884) • FIMKO • cUL tested to CSA 22.
2 bulletin 5A REMARKS CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6 CTR > 40 %, DIP-6 CTR 63 % to 125 %, DIP-6 CTR 100 % to 200 %, DIP-6 CTR 160 % to 320 %, DIP-6 Document Number: 83532 Rev.
1.
7, 28-Oct-09 For technical questions, contact: optocoupleranswers@vishay.
com www.
vishay.
com 789 TCDT1120, TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT tp ≤ 10 μs VR 5 V IF 60 mA IFSM 3 A Pdiss 100 mW Tj 125 °C Collector emitter voltage Emitter collector voltage Collector current Collecto...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)