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TD62M2701F

Toshiba
Part Number TD62M2701F
Manufacturer Toshiba
Description LOW SATURATION VOLTAGE H-BRIDGE DRIVER
Published Apr 23, 2005
Detailed Description TD62M2701F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M2701F LOW SATURATION VOLTAGE H−BRIDGE DRIVER TD62...
Datasheet PDF File TD62M2701F PDF File

TD62M2701F
TD62M2701F

Overview
TD62M2701F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M2701F LOW SATURATION VOLTAGE H−BRIDGE DRIVER TD62M2701F is multi−chip H−bridge driver IC incorporates 4 low saturation discrete transistors which equipped bias−resistor and fly−wheel diode.
This IC is suitable for forward−reverse control on a battery use motor drive applications.
FEATURES l Suitable for high efficiency motor drive circuit l Built−in fly−wheel diode (lower side) l Built−in bias resistor (lower side) : R = 10 kΩ (Typ.
) l SSOP 16 (1 mm pitch) package sealed l Low saturation voltage : VCE (sat) (upper + lower)= 0.
23 V (Typ.
) : IO = 1 A = 0.
45 V (Typ.
) : IO = 2 A Weight: 0.
14 g (Typ.
) BLOCK DIAGRAM PIN CONNECTION (TOP VIEW) 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Supply Voltage Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Output Current Base Current Diode Forward Current Power Dissipation Junction Temperature Operating Temperature Storage Temperature VCC VCBO VCER VEBO IOUT IO (PEAK) IB IB (PEAK) IF PD Tj Topr Tstg 10 10 10 6 2 4 (Note 1) ±0.
4 ±0.
8 (Note 1) 2 (Note 2) 490 150 −40~85 −55~150 Note 1: T = 10 ms Max.
and maximum duty is less than 30% Note 2: T = 10 ms single pulse UNIT V V V V A A A mW °C °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Current Gain Upper Side Lower Side Upper Side Output Saturation Voltage Lower Side Summing Total Transition Frequency Output Leakage Current Upper Side Lower Side Diode Forward Voltage (Lower Side) Base−Emitter Resistance Base−Emitter Forward Voltage Upper Side Lower Side SYMBOL hFE (1) hFE (1) hFE (2) VCE (sat) fT IOL VF RBE VBE (PNP) VBE (NPN) TEST CIR− CUIT TEST CONDITION ― VCE = −1 V, IC = −0.
5 A ― VCE = 1 V, IC = 0.
5 A ― VCE = 1 V, IC = 2.
0 A IC = −1A, IB = −25 mA IC = −2A, IB = −50 mA IC = 1A, IB = 25 mA ― IC = 2A, IB = 50 mA IC = 0.
5A, IB = 12.
5 mA IC = 1A, IB = 25 mA IC = 2A, IB = 50 mA ― VCE = 2 V, IC = 0.
5 A ― VCC = −10 V V...


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