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TD62M4503AFN

Toshiba
Part Number TD62M4503AFN
Manufacturer Toshiba
Description POWER MOS FET 4CH SINK DRIVER
Published Apr 23, 2005
Detailed Description TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503...
Datasheet PDF File TD62M4503AFN PDF File

TD62M4503AFN
TD62M4503AFN

Overview
TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET (2SK1078) × 4 and Diodes (1SS184).
FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.
58 Ω (Typ.
) l Low Leakage Current : IGSS = ±3 µA (Max.
) (VGS = ±16 V) : IGSS = 100 µA (Max.
) (VGS = 60 V) l Enhancement Type : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) l Small Package : SSOP 24 (0.
65 mm Pitch) Weight: 0.
14 g (Typ.
) BLOCK DIAGRAM PIN CONNECTION (TOP VIEW) 1 2001-07-05 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain−Source Voltage Drain−Gate Voltage (RGS = 20 kΩ) Gate−Source Voltage Drain Current DC Pulse Diode Reverse Voltage Diode Average Rectifier Current Power Dissipation ― (Note 1) Junction Temperature Operating Temperature Storage Temperature VDSS VDGR VGSS ID IDP VR IO PD Tj Topr Tstg 60 60 ±20 0.
8 1.
6 80 0.
1 0.
78 0.
89 150 −40~85 −55~150 V V V A A V A W...


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