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AP640R7-00

Alpha Industries
Part Number AP640R7-00
Manufacturer Alpha Industries
Description 24-35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch
Published Apr 23, 2005
Detailed Description 24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch AP640R7-00 Features Chip Outline 0.113 2.078 I Broad Bandwidt...
Datasheet PDF File AP640R7-00 PDF File

AP640R7-00
AP640R7-00

Overview
24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch AP640R7-00 Features Chip Outline 0.
113 2.
078 I Broad Bandwidth I Low Loss, < 1.
5 dB I High Isolation, > 28 dB I Return Loss, < -12 dB I Fast Switching Speed, < 4 ns I High Power Handling, 40 dBm Peak, 36 dBm CW 0.
000 0.
000 1.
100 0.
988 0.
398 1.
095 Description Alpha’s high power, single pole, double throw PIN diode switch is a robust, high performance switch.
It is ideal for low loss, high isolation applications, particularly where broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and is based upon MBE layers for the highest uniformity and repeatability.
The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process.
The GaAs MMIC employs a specialized high power PIN diode in each arm and an on-chip bias network.
Chips are measured on a 100% basis at 24, 28, 31 and 35 GHz for insertion loss, isolation, input and output return losses, and also at DC for diode breakdown voltage and turn on voltage.
Dimensions indicated in mm.
All pads are ≥ 0.
07 mm wide.
Chip thickness = 0.
1 mm.
Absolute Maximum Ratings Characteristic Operating Temperature Storage Temperature DC Reverse Bias DC Forward Bias PIN Value -55°C to +125°C -65°C to +150°C -100 V (-20 mA) +2.
6 V (100 mA) 15 W Electrical Specifications at 25°C Parameter Insertion Loss Isolation Input Return Loss Output Return Loss (Insertion State) Leakage Current Switching Speed1 Output Power at 1 dB Compression1 P1 dB F = 35 GHz Symbol IL ISO RLI RLO IDD Condition F = 24, 28, 31, 35 GHz F = 24, 28, 31, 35 GHz F = 24, 28, 31, 35 GHz F = 24, 28, 31, 35 GHz V = -50 V 28 Min.
Typ.
2 1.
2 30 16 17 2 4 36 12 14 20 Max.
1.
5 Unit dB dB dB dB µA ns dBm 1.
Not measured on a 100% basis.
2.
Typical represents the median parameter value across the specified frequency range for the median chip.
Alpha I...


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