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APT1001R6BN

Advanced Power Technology
Part Number APT1001R6BN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1001R6BN PDF File

APT1001R6BN
APT1001R6BN

Overview
D TO-247 G S APT1001R6BN 1000V 8.
0A 1.
60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.
5A 2.
40Ω All Ratings: TC = 25°C unless otherwise specified.
APT 1001R6BN APT 1002R4BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 8 32 ±30 240 1.
96 1000 6.
5 26 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / T...


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