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APT1001RBVR

Advanced Power Technology
Part Number APT1001RBVR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode ...
Datasheet PDF File APT1001RBVR PDF File

APT1001RBVR
APT1001RBVR

Overview
APT1001RBVR 1000V 11A 1.
000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT1001RBVR UNIT Volts Amps 1000 11 44 ±30 ±40 280 2.
24 -55 to ...


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