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APT1004RCN

Advanced Power Technology
Part Number APT1004RCN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D TO-254 G S APT1004RCN 1000V 3.6A 4.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1004RCN PDF File

APT1004RCN
APT1004RCN

Overview
D TO-254 G S APT1004RCN 1000V 3.
6A 4.
00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APT1004RCN UNIT Volts Amps 1000 3.
6 14.
4 ±30 125 1.
0 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions Drain-So...


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