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APT10M11JVR

Advanced Power Technology
Part Number APT10M11JVR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10M11JVR 100V 144A 0.011Ω S D POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement m...
Datasheet PDF File APT10M11JVR PDF File

APT10M11JVR
APT10M11JVR

Overview
APT10M11JVR 100V 144A 0.
011Ω S D POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
S G SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular SOT-227 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT10M11JVR UNIT Volts Amps 100 144 576 ±30 ±40 450 3.
6 -55 to 150 300 144 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Vo...


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