DatasheetsPDF.com

APT20M18B2VR

Advanced Power Technology
Part Number APT20M18B2VR
Manufacturer Advanced Power Technology
Description N-Channel MOSFET
Published Apr 23, 2005
Detailed Description APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel...
Datasheet PDF File APT20M18B2VR PDF File

APT20M18B2VR
APT20M18B2VR

Overview
APT20M18B2VR APT20M18LVR 200V 100A 0.
018W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ TO-264 LVR • Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter D G S • 100% Avalanche Tested All Ratings: TC = 25°C unless otherwise specified.
APT20M18 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 5 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F AD IN 200 100 400 5 ±30 ±40 625 5.
0 Volts Watts W/°C °C Amps mJ -55 to 150 300 100 50 (Repetitive and Non-Repetitive) 1 4 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 200 100 0.
018 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts rev- 11-99 050-5910 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com USA EURO...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)