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APT20M22B2VR

Advanced Power Technology
Part Number APT20M22B2VR
Manufacturer Advanced Power Technology
Description N-Channel MOSFET
Published Apr 23, 2005
Detailed Description APT20M22B2VR 200V 100A 0.022Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode...
Datasheet PDF File APT20M22B2VR PDF File

APT20M22B2VR
APT20M22B2VR

Overview
APT20M22B2VR 200V 100A 0.
022Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ • Faster Switching • Lower Leakage • 100% Avalanche Tested • New T-MAX™ Package (Clip-mounted TO-247 Package) G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 6 6 All Ratings: TC = 25°C unless otherwise specified.
APT20M22B2VR UNIT Volts Amps 200 100 400 ±30 ±40 520 4.
16 -55 to 150 300 100 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 6 Volts Watt...


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